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Nitrogen Doped Silicon Carbide Process On Plasma Enhanced Cvd Tool

Request For Proposals

General Information

China
   ti:0705-174016203747
   Apr 20, 2017
   May 9, 2017
   English
   Other

Contact information

   14F. Mei Li Yuan Mansion 358 Yan An Road (W), Shanghai, China Attn: Ma Qin
China
   +86-86-21-62791919-176

Goods, Works and Services

Microelectronic machinery and apparatus  

Original Text

      
Tenders are invited for Nitrogen doped silicon carbide process on plasma enhanced cvd tool 1) Nitrogen doped Silicon Carbide Process on Plasma Enhanced CVD tool, Quantity: 1set Price of Bidding Documents: ??1000/$150/$150 Beginning of Selling Bidding Documents: 2017-04-10 Ending of Selling Bidding Documents: 2017-04-17 Deadline for Submitting Bids/Time of Bid Opening (Beijing Time): 2017-05-09 1330

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